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| BUZ 102 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * dv/dt rated * Low on-resistance * 175C operating temperature * also in TO-220 SMD available Pin 1 G Type BUZ 102 Pin 2 D Pin 3 S VDS 50 V ID 42 A RDS(on) 0.023 Package TO-220 AB Ordering Code C67078-S1351-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 111 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 180 dv/dt 6 mJ ID = 42 A, VDD = 25 V, RGS = 25 L = 102 H, Tj = 25 C Reverse diode dv/dt kV/s IS = 42 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate source voltage Power dissipation VGS Ptot 20 200 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 0.83 75 E 55 / 175 / 56 C K/W Semiconductor Group 1 07/96 BUZ 102 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.017 4 1 100 100 100 V VGS = 0 V, ID, Tj = -40 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA A nA 0.023 VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = -40 C VDS = 50 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 42 A Semiconductor Group 2 07/96 BUZ 102 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 10 28 1620 550 240 - S pF 2160 825 360 ns 25 38 VDS 2 * ID * RDS(on)max, ID = 42 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 95 140 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 300 400 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 160 215 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 102 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.2 75 0.12 42 168 V 1.7 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 84 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 102 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 45 A 220 W Ptot 180 160 ID 35 30 140 120 100 80 60 10 40 5 20 0 0 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 C 180 25 20 15 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 A K/W ID 10 2 /ID = ) on S( D R t = 30.0s p ZthJC 10 -1 VD S 100 s 1 ms D = 0.50 0.20 10 1 10 ms 10 -2 0.10 0.05 0.02 DC single pulse 10 0 0 10 10 -3 -7 10 0.01 10 1 V 10 2 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 102 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 100 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.070 a b c d e f Ptot = 200W l kj i h VGS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0.060 ID 80 70 60 50 40 30 20 10 g RDS (on) 0.055 0.050 0.045 0.040 0.035 0.030 g c fd e f e g h i dj k l 0.025 0.020 0.015 k i h j c b 0.010 VGS [V] = 0.005 0.000 0 a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 10 20 30 40 50 60 70 A 90 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 60 A 50 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 30 S 26 ID 45 40 35 30 25 20 15 10 gfs 24 22 20 18 16 14 12 10 8 6 4 5 0 0 1 2 3 4 5 6 7 8 V 10 VGS 2 0 0 10 20 30 40 A 60 ID Semiconductor Group 6 07/96 BUZ 102 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 42 A, VGS = 10 V 0.065 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.055 98% RDS (on) 0.050 0.045 0.040 0.035 0.030 0.025 0.020 VGS(th) 3.6 3.2 2.8 2.4 typ 98% 2.0 2% typ 1.6 1.2 0.015 0.010 0.005 0.000 -60 -20 20 60 100 C 180 0.8 0.4 0.0 -60 -20 20 60 100 C 180 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 A C pF IF 10 2 Ciss 10 3 Coss 10 1 Tj = 25 C typ Tj = 175 C typ Crss Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 10 0 0.0 5 10 15 20 25 30 V 40 VDS 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 102 Avalanche energy EAS = (Tj ) parameter: ID = 42 A, VDD = 25 V RGS = 25 , L = 102 H 190 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 63 A 16 V 160 EAS 140 120 100 80 VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 60 4 40 20 0 20 2 0 40 60 80 100 120 140 C 180 0 10 20 30 40 50 60 nC 80 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07/96 BUZ 102 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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